II-VI Incorporated
Principal Engineer (Crystal Growth R&D) (Finance)
II-VI is an equal opportunity/affirmative action employer. All qualified applicants will receive consideration for employment without regard to sex, gender identity, sexual orientation, race, color, religion, national origin, disability, protected Veteran status, age, or any other characteristic protected by law.II-VI is a global leader in engineered materials and optoelectronic components and is a vertically integrated manufacturing company that develops innovative products for diversified applications in the industrial, optical communications, military, life sciences, semiconductor equipment, and consumer markets. II-VI provides a comprehensive career development platform within an environment that challenges employees to perform at their best, while rewarding excellence and hard-work through a competitive compensation program. It's an exciting opportunity to work for a company that offers stability, longevity and growth. Come Join Us!Work with a dynamic and energetic R&D team to develop large-diameter high-quality silicon carbide (SiC) substrate, improve growth apparatus, improve process efficiency, improve substrate quality, and reduce manufacturing cost. Perform crystal growth experiments and data analysis to establish statistical correlations and trends. Characterize single crystals, wafers and related materials using all necessary tools and techniques. Assist design of new crystal growth furnaces and equipment. Perform modeling to optimize growth hot zone design. Perform failure mode effect analysis of design and process to improve process yield and quality. Develop and optimize crystal growth process to achieve improved crystal quality, yield and throughput. Generate scientific and technical ideas and contribute to the Intellectual Property Portfolio of II-VI by writing IP disclosures.